Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering
arXiv:2306.13921 · doi:10.1088/0256-307X/40/5/058503
Abstract
Two-dimensional (2D) van der Waals semiconductors are appealing for low-power transistors. Here, we show the feasibility in enhancing carrier mobility in 2D semiconductors through engineering the vertical distribution of carriers confined inside the ultrathin channels via symmetrizing gate configuration or increasing channel thickness. Through self-consistently solving the Schrödinger-Poisson equations, the shapes of electron envelope functions are extensively investigated by clarifying their relationship with gate configuration, channel thickness, dielectric permittivity, and electron density. The impacts of electron distribution variation on various carrier scattering matrix elements and overall carrier mobility are insightfully clarified. It is found that the carrier mobility can be generally enhanced in the dual-gated configuration due to the centralization of carrier redistribution in the nanometer-thick semiconductor channels and the rate of increase reaches up to 23% in HfO dual-gated 10-layer MoS channels. This finding represents a viable strategy for performance optimization in transistors consisting of 2D semiconductors.
arXiv comment15 pages, 5 figures
References in corpus (13)
- Mobility engineering and metal-insulator transition in monolayer MoS2
- First-principles study of the phonon-limited mobility in n-type single-layer MoS2
- Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
- Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
- Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
- Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
- Effect of high-K dielectrics on charge transport in graphene
- Inelastic Scattering and Current Saturation in Graphene
- Charge Scattering and Mobility in Atomically Thin Semiconductors
- Mobility enhancement and temperature dependence in top-gated single-layer MoS2
- Coulomb screening and scattering in atomically thin transistors across dimensional crossover
- Clean BN encapsulated 2D FETs with lithography compatible contacts
- Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering