Coulomb screening and scattering in atomically thin transistors across dimensional crossover

Abstract

Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated systems, in response to the changes of three crucial Coulomb factors, including electric permittivity, interaction length, and density of Coulomb impurities. We systematically collect and analyze the trends of electron mobility with respect to the above factors, realized by synergic modulations on channel thicknesses and gating modes in dual-gated MoS2 transistors with asymmetric dielectric cleanliness. Strict configurative form factors are developed to capture the subtle parametric changes across dimensional crossover. A full diagram of the carrier scattering mechanisms, in particular on the pronounced Coulomb scattering, is unfolded. Moreover, we clarify the presence of up to 40% discrepancy in mobility by considering the permittivity modification across dimensional crossover. The understanding is useful for exploiting atomically thin body transistors for advanced electronics.

arXiv comment26 pages, 5 figures

References in corpus (8)

• First-principles study of the phonon-limited mobility in n-type single-layer MoS2
• Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
• Measurement of mobility in dual-gated MoS2 transistors
• Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
• Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
• Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures
• Bridging the gap between atomically thin semiconductors and metal leads
• Carrier Injection and Scattering in Atomically Thin Chalcogenides

Cited by in corpus (2)

• Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering
• Noninvasive Photodelamination of van der Waals Semiconductors for High-Performance Electronics