418 citations · 553 across the 13 of their papers we have counts for
13 papers
Oxidation kinetics and non-Marcusian charge transfer in dimensionally confined semiconductors
Ning Xu, Li Shi, Xudong Pei +8
Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substance…
Non-invasive digital etching of van der Waals semiconductors
Jian Zhou, Chunchen Zhang, Li Shi +12
The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelec…
Antiferromagnetic -MnTe: Molten-Salt-Assisted Chemical Vapor Deposition Growth and Magneto-Transport Properties
Shuaixing Li, Jianghua Wu, Binxi Liang +11
Antiferromagnetic (AF) materials are attracting increasing interest of research in magnetic physics and spintronics. Here, we report controllable synthesis of room-temperature AF $…
Unraveling Intertwined Impacts between Lattice Vacancy and Substrate on Photonic Quasiparticles in Monolayer MoS
Ning Xu, Daocheng Hong, Xudong Pei +6
Lattice defects and interfacial absorbates represent two extrinsic but ubiquitous factors that exert profound impacts on the luminescent properties of semiconductors. However, thei…
Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe FETs
Yinjiang Shao, Jian Zhou, Ning Xu +5
Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properti…
Clean BN encapsulated 2D FETs with lithography compatible contacts
Binxi Liang, Anjian Wang, Jian Zhou +6
Device passivation through ultraclean hexagonal BN encapsulation is proven one of the most effective ways for constructing high-quality devices with atomically thin semiconductors…
A nanogapped hysteresis-free field-effect transistor
Jiachen Tang, Luhao Liu, Yinjiang Shao +3
We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure…
Electrical contact properties between Yb and few-layer WS
Shihao Ju, Lipeng Qiu, Jian Zhou +7
Charge injection mechanism from contact electrodes into two-dimensional (2D) dichalcogenides is an essential topic for exploiting electronics based on 2D channels, but remains not…
Coulomb screening and scattering in atomically thin transistors across dimensional crossover
Shihao Ju, Binxi Liang, Jian Zhou +3
Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental…
Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering
Binxi Liang, Luhao Liu, Jiachen Tang +3
Two-dimensional (2D) van der Waals semiconductors are appealing for low-power transistors. Here, we show the feasibility in enhancing carrier mobility in 2D semiconductors through…
Noninvasive Photodelamination of van der Waals Semiconductors for High-Performance Electronics
Ning Xu, Xudong Pei, Lipeng Qiu +4
Atomically thin two-dimensional (2D) van der Waals semiconductors are promising candidate materials for post-silicon electronics. However, it remains challenging to attain complete…
Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS2 through interface engineering
Anran Wang, Yuhan Wang, Jianfei Li +5
Transition metal dichalcogenides (TMDs) are known to support complex excitonic states. Revealing the differences in relaxation dynamics among different excitonic species and elucid…
Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
Zhihao Yu, Zhun-Yong Ong, Songlin Li +5
Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body th…