A nanogapped hysteresis-free field-effect transistor

Abstract

We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features a semi-suspended channel above a submicron-long wedge-like nanogap, is fulfilled by transferring ultraclean BN-supported MoS${}_2$ channels directly onto dielectric-spaced vertical source/drain stacks. Electronic characterization and analyses reveal a high overall device quality, including ultraclean channel interfaces, negligible electrical scanning hysteresis, and Ohmic contacts in the structures. The unique hollow FET structure holds the potential for exploiting reliable electronics, as well as nanofluid and pressure sensors.

arXiv comment22 pages, 4 figures, with SI

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• A nanogapped hysteresis-free field-effect transistor

Cited by in corpus (1)

• A nanogapped hysteresis-free field-effect transistor