37 citations · 98 across the 9 of their papers we have counts for
9 papers
Layer-dependent electromechanical response in twisted graphene moiré superlattices
Hanhao Zhang, Yuanhao Wei, Yuhao Li +9
The coupling of mechanical deformation and electrical stimuli at the nanoscale has been a subject of intense investigation in the realm of materials science. Recently, twisted van…
Oxidation kinetics and non-Marcusian charge transfer in dimensionally confined semiconductors
Ning Xu, Li Shi, Xudong Pei +8
Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substance…
Non-invasive digital etching of van der Waals semiconductors
Jian Zhou, Chunchen Zhang, Li Shi +12
The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelec…
Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe FETs
Yinjiang Shao, Jian Zhou, Ning Xu +5
Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properti…
A nanogapped hysteresis-free field-effect transistor
Jiachen Tang, Luhao Liu, Yinjiang Shao +3
We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure…
Electrical contact properties between Yb and few-layer WS
Shihao Ju, Lipeng Qiu, Jian Zhou +7
Charge injection mechanism from contact electrodes into two-dimensional (2D) dichalcogenides is an essential topic for exploiting electronics based on 2D channels, but remains not…
Noninvasive Photodelamination of van der Waals Semiconductors for High-Performance Electronics
Ning Xu, Xudong Pei, Lipeng Qiu +4
Atomically thin two-dimensional (2D) van der Waals semiconductors are promising candidate materials for post-silicon electronics. However, it remains challenging to attain complete…
Symmetry breaking and anomalous conductivity in a double moiré superlattice
Yuhao Li, Minmin Xue, Hua Fan +13
A double moiré superlattice can be realized by stacking three layers of atomically thin two-dimensional materials with designer interlayer twisting or lattice mismatches. In this n…
High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing
Ru Xu, Peng Chen, Jing Zhou +13
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. H…