37 citations · 98 across the 9 of their papers we have counts for
6 papers · 1 filter
Oxidation kinetics and non-Marcusian charge transfer in dimensionally confined semiconductors
Ning Xu, Li Shi, Xudong Pei +8
Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substance…
Non-invasive digital etching of van der Waals semiconductors
Jian Zhou, Chunchen Zhang, Li Shi +12
The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelec…
Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe FETs
Yinjiang Shao, Jian Zhou, Ning Xu +5
Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properti…
Electrical contact properties between Yb and few-layer WS
Shihao Ju, Lipeng Qiu, Jian Zhou +7
Charge injection mechanism from contact electrodes into two-dimensional (2D) dichalcogenides is an essential topic for exploiting electronics based on 2D channels, but remains not…
Noninvasive Photodelamination of van der Waals Semiconductors for High-Performance Electronics
Ning Xu, Xudong Pei, Lipeng Qiu +4
Atomically thin two-dimensional (2D) van der Waals semiconductors are promising candidate materials for post-silicon electronics. However, it remains challenging to attain complete…
High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing
Ru Xu, Peng Chen, Jing Zhou +13
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. H…