activity
20062009
most citedRoom Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors

1.5k citations · 1.7k across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2009

Chemical Self Assembly of Graphene Sheets

Hailiang Wang, Xinran Wang, Xiaolin Li +1

Chemically derived graphene sheets were found to self-assemble onto patterned gold structures via electrostatic interactions between noncovalent functional groups on GS and gold. T…

cond-mat.mtrl-sci200964 cited

Optical Characterizations and Electronic Devices of Nearly Pure (10,5) Single-Walled Carbon Nanotubes

Li Zhang, Xiaomin Tu, Kevin Welsher +3

It remains an elusive goal to achieve high performance single-walled carbon nanotube (SWNTs) field effect transistors (FETs) comprised of only single chirality SWNTs. Many separati…

cond-mat.mes-hall20081.5k cited

Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors

Xinran Wang, Yijian Ouyang, Xiaolin Li +3

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff rat…

cond-mat.mtrl-sci2006165 cited

Hydrogenation and Hydro-Carbonation and Etching of Single-Walled Carbon Nanotubes

Guangyu Zhang, Pengfei Qi, Xinran Wang +4

We present a systematic experimental investigation of the reactions between hydrogen plasma and single-walled carbon nanotubes (SWNTs) at various temperatures. Microscopy, infrared…

cond-mat.mtrl-sci20066 cited

DNA Functionalization of Carbon Nanotubes for Ultra-Thin Atomic Layer Deposition of High k Dielectrics for Nanotube Transistors with 60mV/decade Switching

Yuerui Lu, Sarunya Bangsaruntip, Xinran Wang +3

For single-walled carbon nanotube (SWNT) field effect transistors, vertical scaling of high k dielectrics by atomic layer deposition (ALD) currently stands at ~8nm with subthreshol…