Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices

Abstract

We report the study of a tri-axial vector magnetoresistance (MR) in nonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%: -1%: 225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications, for example, vector magnetic sensors.

arXiv comment23 pages, 12 figures

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Cited by in corpus (4)

• Quantum Transport in Topological Semimetals under Magnetic Fields
• Quantum Transport in Topological Semimetals under Magnetic Fields (II)
• Quantum Interference Theory of Magnetoresistance in Dirac Materials
• Diagnosing the magnetic field-tuned symmetry nature of the topological electrons by conductance fluctuations in bulk-insulating BiSbTeSe2 devices