2 papers
cond-mat.mtrl-sci2023
Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe FETs
Yinjiang Shao, Jian Zhou, Ning Xu +5
Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properti…
cond-mat.mes-hall2023
A nanogapped hysteresis-free field-effect transistor
Jiachen Tang, Luhao Liu, Yinjiang Shao +3
We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure…