Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe FETs
arXiv:2306.14171 · doi:10.1088/0256-307X/40/6/068501
Abstract
Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properties in few-layer MoSe field-effect transistors (FETs) that are simultaneously van der Waals contacted with gold electrodes and are fully encapsulated in ultraclean hexagonal boron nitride dielectrics. The FETs exhibit electronically favorable channel/dielectric interfaces with low densities of interfacial traps (cm), which lead to outstanding device characteristics at room temperature, including a near-Boltzmann-limit subthreshold swings (mV/dec), a high carrier mobility (cmVs), and a negligible scanning hysteresis (mV). The dependence of various contact-related quantities on temperature and carrier density are also systematically characterized to understand the van der Waals contacts between gold and MoSe. The results provide insightful information on the device physics in van der Waals contacted and encapsulated 2D FETs.
14 pages, 4 figures
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