most citedIntrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe FETs

4 citations · 4 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2023★ 4 cited

Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe FETs

Yinjiang Shao, Jian Zhou, Ning Xu +5

Two-dimensional (2D) semiconductors have attracted considerable interest for their unique physical properties. Here, we report the intrinsic cryogenic electronic transport properti…