Density-dependent spin susceptibility and effective mass in monolayer MoSe2

Abstract

Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth contacts, enabling reliable ohmic contact down to low electron densities, with a maximum Hall mobility of approximately 22,000 cm2/Vs. Low-temperature transport measurements illustrate metal-insulator transitions, and density-dependent quantum oscillation sequences. Enhanced spin susceptibility and density-dependent effective mass are observed, attributed to interaction effects and valley polarization. These findings establish monolayer MoSe2 as a versatile platform for further exploring interaction-driven quantum states.

References in corpus (28)

• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Observation of Fractionally Quantized Anomalous Hall Effect
• Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
• Quantum anomalous Hall effect from intertwined moiré bands
• Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2
• Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides
• Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
• Strongly correlated excitonic insulator in atomic double layers
• Observation of Wigner crystal of electrons in a monolayer semiconductor
• Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System
• Phase Diagram of the Low-Density Two-Dimensional Homogeneous Electron Gas
• Superconductivity in twisted bilayer WSe${}_2$
• Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
• Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS${}_2$
• Giant paramagnetism induced valley polarization of electrons in charge-tunable monolayer MoSe2
• Large effective mass and interaction-enhanced Zeeman splitting of $K$-valley electrons in MoSe${}_2$
• Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells
• Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe${}_2$
• Ambipolar Landau levels and strong band-selective carrier interactions in monolayer WSe${}_2$
• Via Method for Lithography Free Contact and Preservation of 2D Materials
• Odd- and even-denominator fractional quantum Hall states in monolayer WSe${}_2$
• Charge-transfer Contact to a High-Mobility Monolayer Semiconductor
• Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2
• Bridging the gap between atomically thin semiconductors and metal leads
• Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2
• Probing Landau levels of strongly interacting massive Dirac electrons in layer-polarized MoS${}_2$
• Bilayer h-BN Barriers for Tunneling Contacts in Fully-Encapsulated Monolayer $\mathbf{MoS}{\mathbf{e}}_2$ Field-Effect Transistors
• Intrinsic Electronic Properties of BN Encapsulated, van der Waals Contacted MoSe${}_2$ FETs