Large-Signal Model of Graphene Field-Effect Transistors -- Part I: Compact Modeling of GFET Intrinsic Capacitances

Abstract

We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a tool for simulating the electrical behavior of graphene-based integrated circuits, dealing with the DC, transient behavior, and frequency response of the circuit. The drain current model is based in a drift-diffusion mechanism for the carrier transport coupled with an appropriate field-effect approach. The intrinsic capacitance model consists of a 16-capacitance matrix including self-capacitances and transcapacitances of a four-terminal GFET. To guarantee charge conservation, a Ward-Dutton linear charge partition scheme has been used. The large-signal model has been implemented in Verilog-A, being compatible with conventional circuit simulators and serving as a starting point toward the complete GFET device model that could incorporate additional non-idealities.

6 pages, 6 figures. Action H2020: Research & Innovation Actions (RIA), Title: Graphene-based disruptive technologies. GrapheneCore1, Grant no. 696656 European Union (EU) Horizon 2020. IEEE Transactions on Electron Devices (2016). arXiv admin note: text overlap with arXiv:1512.07159

References in corpus (3)

• Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
• Large-Signal Model of Graphene Field-Effect Transistors -- Part II: Circuit Performance Benchmarking
• Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment

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• Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
• Large-Signal Model of Graphene Field-Effect Transistors -- Part II: Circuit Performance Benchmarking
• A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
• Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances
• Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
• Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics
• Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
• Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
• Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments
• Low-frequency noise parameter extraction method for single layer graphene FETs
• Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
• Non-quasi-static effects in graphene field-effect transistors under high-frequency operation
• Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
• Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs