Large-Signal Model of Graphene Field-Effect Transistors -- Part II: Circuit Performance Benchmarking
arXiv:1605.08237 · doi:10.1109/TED.2016.2563464
Abstract
This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. Specifically we have simulated a high-frequency performance amplifier, together with other circuits that take advantage of the ambipolarity of graphene, such as a frequency doubler, a radio-frequency subharmonic mixer and a multiplier phase detector. A variety of simulations comprising DC, transient dynamics, Bode diagram, S-parameters, and power spectrum have been compared with experimental data to assess the validity of the model.
6 pages, 11 figures. Action H2020: Research & Innovation Actions (RIA), Title: Graphene-based disruptive technologies. GrapheneCore1, Grant no. 696656 / European Union (EU) / Horizon 2020. IEEE Transactions on Electron Devices (2016)
References in corpus (2)
Cited by in corpus (9)
- Large-Signal Model of Graphene Field-Effect Transistors -- Part I: Compact Modeling of GFET Intrinsic Capacitances
- A review for compact model of graphene field-effect transistors
- Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
- A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications
- Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances
- Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics
- Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments
- Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
- Non-quasi-static effects in graphene field-effect transistors under high-frequency operation