activity
20062021
most citedAnalytic model for the surface potential and drain current in negative capacitance field-effect transistors

144 citations · 872 across the 28 of their papers we have counts for

collaborators

28 papers

physics.app-ph2021★ 6 cited

A small-signal description of black phosphorus transistor technologies for high-frequency applications

Leslie Valdez-Sandoval, Eloy Ramirez-Garcia, Saungeun Park +3

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is ab…

physics.app-ph2021★ 10 cited

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

Javier Noe Ramos-Silva, Anibal Pacheco-Sanchez, Eloy Ramirez-Garcia +1

An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase…

physics.app-ph2021

Input referred low-frequency noise analysis for single-layer graphene FETs

Nikolaos Mavredakis, David Jimenez

The bias-dependence of input referred low-frequency noise (LFN), SVG, is a considerable facet for RF circuit design. SVG was considered constant in silicon transistors but this was…

cond-mat.mes-hall2021★ 1 cited

Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Paulius Sakalas +4

In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observa…

physics.app-ph2021★ 7 cited

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

A. Toral-Lopez, F. Pasadas, E. G. Marin +5

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of nu…

physics.app-ph2020★ 9 cited

Small-signal parameters extraction and noise analysis of CNTFETs

Javier N. Ramos-Silva, Aníbal Pacheco-Sánchez, Mauro A. Enciso-Aguilar +2

The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This…