Model of the Electrostatics and Tunneling Current of Metal-Graphene Junctions and Metal-Insulator-Graphene Heterostructures
arXiv:1309.0390 · doi:10.1063/1.4874181
Abstract
In this paper we present a comprehensive model for the tunneling current of the metal-insulator-graphene heterostructure, based on the Bardeen Transfer Hamiltonian method, of the metal-insulator-graphene heterostructure. As a particular case we have studied the metal-graphene junction, unveiling the role played by different electrical and physical parameters in determining the differential contact resistance.
4 pages, 8 figures
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- Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
- Mechanical control of quantum transport in graphene
- Modeling the Oblique Spin Precession in Lateral Spin Valves for Accurate Determination of Spin Lifetime Anisotropy: Effect of Finite Contact Resistance and Channel Length
- Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications
- Quantum time-dependent Monte Carlo simulation of electron devices with 2D linear-band materials: a genuine TeraHertz signature for graphene
- Giant Electron-hole Charging Energy Asymmetry in Ultra-short Carbon Nanotubes
- Graphene on Silicon Hybrid Field-Effect Transistors
- Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment
- Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime
- Current-induced enhancement of photo-response in graphene THz radiation detectors
- Electrical Contact Resistance in Graphite-Graphene contacts from ab initio methods