Current-induced enhancement of photo-response in graphene THz radiation detectors
arXiv:2210.02839 · doi:10.1063/5.0117818
Abstract
Thermoelectric readout in a graphene THz radiation detector requires a p-n junction across the graphene channel. Even without an intentional p-n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the proximity to metal. In a symmetrical structure, these junctions are connected back-to-back and therefore counterbalance each other with regard to rectification of the ac signal. Because of the Peltier effect, a small dc current results in additional heating in one- and cooling in another p-n junction, thereby breaking the symmetry. The p-n junctions then no longer cancel, resulting in a greatly enhanced rectified signal. This allows to simplify the design and effectively control the sensitivity of the THz-radiation detectors.
References in corpus (8)
- Doping graphene with metal contacts
- Graphene field effect transistors as room-temperature Terahertz detectors
- Thermoelectric and Magnetothermoelectric Transport Measurements of Graphene
- Supercollision cooling in undoped graphene
- Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures
- Symmetry-breaking supercollisions in Landau-quantized graphene
- Theory of the effective Seebeck coefficient for photoexcited 2D materials: the case of graphene
- Large responsivity of graphene radiation detectors with thermoelectric readout