Giant Electron-hole Charging Energy Asymmetry in Ultra-short Carbon Nanotubes

Abstract

Making full usage of bipolar transport in single-wall carbon nanotube (SWCNT) transistors could permit the development of two-in-one quantum devices with ultra-short channels. We report on clean $\sim$10 to 100 nm long suspended SWCNT transistors which display a large electron-hole transport asymmetry. The devices consist of naked SWCNT channels contacted with sections of SWCNT-under-annealed-gold. The annealed gold acts as an n-doping top gate which creates nm-sharp barriers at the junctions between the contacts and naked channel. These tunnel barriers define a single quantum dot (QD) whose charging energies to add an electron or a hole are vastly different ($e-h$ charging energy asymmetry). We parameterize the $e-h$ transport asymmetry by the ratio of the hole and electron charging energies ${\eta }_{e-h}$. We show that this asymmetry is maximized for short channels and small band gap SWCNTs. In a small band gap SWCNT device, we demonstrate the fabrication of a two-in-one quantum device acting as a QD for holes, and a much longer quantum bus for electrons. In a 14 nm long channel, ${\eta }_{e-h}$ reaches up to 2.6 for a device with a band gap of 270 meV. This strong $e-h$ transport asymmetry survives even at room temperature.

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