26 citations · 58 across the 3 of their papers we have counts for
3 papers
Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments
Giovanni Spinelli, Patrizia Lamberti, Vincenzo Tucci +2
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon ele…
Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
Francisco Pasadas, Enrique G. Marin, Alejandro Toral-Lopez +5
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor based field effect transistors, which provides explicit expressions for the drain…
GFET Asymmetric Transfer Response Analysis through Access Region Resistances
A. Toral-Lopez, E. G. Marin, F. Pasadas +4
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-…