42 citations · 145 across the 6 of their papers we have counts for
6 papers
Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis +3
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical…
An extraction method for mobility degradation and contact resistance of graphene transistors
Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +1
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different techn…
Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…
Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
Pedro Carlos Feijoo, Francisco Pasadas, Marlene Bonmann +10
It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numer…
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
Pedro C. Feijoo, Francisco Pasadas, José M. Iglesias +7
The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with…
Short channel effects in graphene-based field effect transistors targeting radio-frequency applications
Pedro C. Feijoo, David Jiménez, Xavier Cartoixà
Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrate…