42 citations · 145 across the 6 of their papers we have counts for
4 papers · 1 filter
Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis +3
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical…
Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…
Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
Pedro Carlos Feijoo, Francisco Pasadas, Marlene Bonmann +10
It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numer…
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
Pedro C. Feijoo, Francisco Pasadas, José M. Iglesias +7
The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with…