23 citations · 114 across the 8 of their papers we have counts for
8 papers
Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
María Ángela Pampillón, Pedro Carlos Feijoo, Enrique San Andrés
In this work, we characterized gadolinium oxide films deposited on silicon by high pressure sputtering with a two-step process: first, we sputtered metallic gadolinium in an argon…
Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs
Pedro C. Feijoo, Thomas Kauerauf, María Toledano-Luque +3
In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean…
High Pressure Sputtering For Kigh-k Dielectric Deposition. Is It Worth Trying?
Enrique San Andrés, Pedro Carlos Feijoo, María Ángela Pampillón +2
Our research group studies the deposition of high permittivity dielectrics by a non-standard method: high-pressure sputtering. The dielectrics studied here are gadolinium scandate…
Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study
María Ángela Pampillón, Pedro Carlos Feijoo, Enrique San Andrés +4
AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of…
Optimization of scandium oxide growth by high pressure sputtering on silicon
Pedro Carlos Feijoo, María Ángela Pampillón, Enrique San Andrés +1
This work demonstrates the viability of scandium oxide deposition on silicon by means of high pressure sputtering. Deposition pressure and radio frequency power are varied for opti…
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +4
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of oppo…
Contact resistance extraction of graphene FET technologies based on individual device characterization
Anibal Pacheco-Sanchez, Pedro C. Feijoo, David Jiménez
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different…
Radio frequency performance projection and stability trade-off of h-BN encapsulated graphene field-effect transistors
Pedro C. Feijoo, Francisco Pasadas, José M. Iglesias +3
Hexagonal boron nitride (h-BN) encapsulation significantly improves carrier transport in graphene. This work investigates the benefit of implementing the encapsulation technique in…