A small-signal GFET equivalent circuit considering an explicit contribution of contact resistances
arXiv:2009.09673 · doi:10.1109/LMWC.2020.3036845
Abstract
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact resistances from intrinsic parameters, obtained by a de-embedding process, and extrinsic parameters of the circuit is considered. The experimental high-frequency performance of three devices from two different GFET technologies is properly described by the proposed small-signal circuit. Some model parameters scale with the device footprint. The correct detachment of contact resistances from the internal transistor enables to assess their impact on the intrinsic cutoff frequency of the studied devices.
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Cited by in corpus (5)
- Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
- An extraction method for mobility degradation and contact resistance of graphene transistors
- Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs
- A small-signal description of black phosphorus transistor technologies for high-frequency applications
- Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions