activity
20202023
most citedExploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics

22 citations · 72 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2023★ 22 cited

Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics

Francisco Pasadas, Alberto Medina-Rull, Francisco G. Ruiz +8

Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the dev…

physics.app-ph2023★ 3 cited

Static and small-signal modeling of radiofrequency hexagonal boron nitride switches

Anibal Pacheco-Sanchez, Omar Jordán-García, Eloy Ramŕez-García +1

A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is pres…

physics.app-ph2021★ 6 cited

A small-signal description of black phosphorus transistor technologies for high-frequency applications

Leslie Valdez-Sandoval, Eloy Ramirez-Garcia, Saungeun Park +3

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is ab…

physics.app-ph2021★ 10 cited

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

Javier Noe Ramos-Silva, Anibal Pacheco-Sanchez, Eloy Ramirez-Garcia +1

An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase…

cond-mat.mes-hall2020★ 4 cited

Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies

Leslie M. Valdez-Sandoval, Eloy Ramirez-Garcia, David Jiménez +1

In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of…

physics.app-ph2020★ 9 cited

Small-signal parameters extraction and noise analysis of CNTFETs

Javier N. Ramos-Silva, Aníbal Pacheco-Sánchez, Mauro A. Enciso-Aguilar +2

The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This…