Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sb,Bi)Te
arXiv:1505.00728 · doi:10.1103/PhysRevB.92.214440
Abstract
We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator . Measurements of the complex Kerr angle, , were performed as a function of photon energy in the range . We observed a peak in the real part of and zero crossing in the imaginary part that we attribute to resonant interaction with a spin-orbit avoided crossing located 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of in the ultrathin film limit, quintuple layers. We find a sharp transition to zero remanent magnetization at 6 K for ~QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.
6 pages, 5 figures
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- Unoccupied Topological Surface State in MnBiTe