Unoccupied Topological Surface State in MnBi${}_2$Te${}_4$

Abstract

The unoccupied part of the band structure in the magnetic topological insulator MnBi${}_2$Te${}_4$ is studied by first-principles calculations. We find a second, unoccupied topological surface state with similar electronic structure to the celebrated occupied topological surface state. This state is energetically located approximate $1.6$ eV above the occupied Dirac surface state around $\Gamma$ point, which permit it to be directly observed by the two-photon angle-resolved photoemission spectroscopy. We propose a unified effective model for the occupied and unoccupied surface states. Due to the direct optical coupling between these two surface states, we further propose two optical effects to detect the unoccupied surface state. One is the polar Kerr effect in odd layer from nonvanishing ac Hall conductance ${\sigma }_{xy}(\omega )$, and the other is higher-order terahertz-sideband generation in even layer, where the non-vanishining Berry curvature of the unoccupied surface state is directly observed from the giant Faraday rotation of optical emission.

7 pages, 3 figures

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Cited by in corpus (1)

• Orbital origin of fourfold anisotropic magnetoresistance in Dirac materials