Tunable Intrinsic Plasmons due to Band Inversion in Topological Materials
arXiv:1710.04786 · doi:10.1103/PhysRevLett.119.266804
Abstract
The band inversion has led to rich physical effects in both topological insulators and topological semimetals. It has been found that the inverted band structure with the Mexican-hat dispersion could enhance the interband correlation leading to a strong intrinsic plasmon excitation. Its frequency ranges from several to tens of and can be effectively tuned by the external fields. The electron-hole asymmetric term splits the peak of the plasmon excitation into double peaks. The fate and properties of this plasmon excitation can also act as a probe to characterize the topological phases even in the lightly doped systems. We numerically demonstrate the impact of the band inversion on plasmon excitations in magnetically doped thin films of three-dimensional strong topological insulators, V- or Cr-doped (Bi, Sb)Te, which support the quantum anomalous Hall states. Our work thus sheds some new light on the potential applications of topological materials in plasmonics.
6 pages, 5 figures, Accepted in PRL
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- Plasmons in Two-Dimensional Topological Insulators
- Friedel oscillations in two-dimensional materials with inverted bands and Mexican-hat dispersion
- Two-photon IR pumped UV-Vis transient absorption spectroscopy of Dirac fermions in the 2D and 3D topological insulator Bi2Se3
- Collective plasmonic modes in the chiral multifold fermionic material CoSi
- Chiral edge plasmons in quantum anomalous Hall insulators
- Interband plasmons due to Mexican hat dispersion in two-dimensional materials with inverted bands
- Anomalous Landau levels and quantum oscillation in rotation-invariant insulators