Opto-Electronic Characterization of Three Dimensional Topological Insulators

Abstract

We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneity's in the electronic properties of the surface states and (ii) the local domain orientation. An important advantage of the proposed method is that it can be applied to study TIs at room temperature and even in materials with a high electron density of bulk carriers.

arXiv comment6 pages, 4 figures

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Cited by in corpus (9)

• Helicity dependent photocurrent in electrically gated (Bi,Sb)_2Te_3 thin films
• Spin Hall photoconductance in a 3D topological insulator at room temperature
• Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators
• Terahertz Photogalvanic Spectroscopy of Three Dimensional Topological Insulators
• Terahertz electric field driven electric currents and ratchet effects in graphene
• Highly superlinear photogalvanic effects in (Bi${}_{0.3}$Sb${}_{0.7}$)${}_2$(Te${}_{0.1}$Se${}_{0.9}$)${}_3$: Probing 3D topological insulator surface states at room temperature
• Photocurrent measurements in topological insulator ${\text{Bi}}_2{\text{Se}}_3$ nanowires
• The impact of metallic contacts on spin-polarized photocurrents in topological insulator ${\text{Bi}}_2{\text{Se}}_3$ nanowires
• THz radiation induced circular Hall effect in graphene