Terahertz Photogalvanic Spectroscopy of Three Dimensional Topological Insulators

Abstract

The paper overviews experimental and theoretical studies of photogalvanic effects induced in BiSbTe- based three dimensional topological insulators by polarized terahertz radiation. We present the state-of-the-art of this subject, including most recent and well-established results. We discuss a phenomenological theory based on symmetry arguments and models illustrating the photocurrents origin. We give a brief glimpse of the underlying microscopic theory, as well as an overview of the main experimental results.

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Cited by in corpus (11)

• Photocurrent as a multi-physics diagnostic of quantum materials
• Optical detection and manipulation of spontaneous gyrotropic electronic order in a transition-metal dichalcogenide semimetal
• High-frequency nonlinear transport and photogalvanic effects in two-dimensional topological insulators
• Topological insulators based on HgTe
• Highly superlinear photogalvanic effects in (Bi${}_{0.3}$Sb${}_{0.7}$)${}_2$(Te${}_{0.1}$Se${}_{0.9}$)${}_3$: Probing 3D topological insulator surface states at room temperature
• Photocurrents in bulk tellurium
• Bulk-Fermi-Arc Transition Induced Large Photogalvanic Effect in Weyl Semimetals
• Terahertz spin ratchet effect in magnetic metamaterials
• Enhanced detection of circularly polarized photons with topological materials
• Terahertz electro-optic effect in Bi${}_2$Se${}_3$ crystals
• Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy