Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy

Abstract

The surface electronic properties of the important topological insulator Bi2Te3 are shown to be robust under an extended surface preparation procedure which includes exposure to atmosphere and subsequent cleaning and recrystallization by an optimized in-situ sputter-anneal procedure under ultra high vacuum conditions. Clear Dirac-cone features are displayed in high-resolution angle-resolved photoemission spectra from the resulting samples, indicating remarkable insensitivity of the topological surface state to cleaning-induced surface roughness.

3 pages, 3 figures

References in corpus (5)

• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• Topological Surface States Protected From Backscattering by Chiral Spin Texture
• A topological insulator surface under strong Coulomb, magnetic and disorder perturbations
• Momentum-Resolved Landau-Level Spectroscopy of Dirac Surface State in Bi2Se3
• Spin-orbit interaction effect in the electronic structure of \BiTe \ observed by angle-resolved photoemission spectroscopy

Cited by in corpus (9)

• Persistence of Topological Order and Formation of Quantum Well States in Topological Insulators Bi2(Se,Te)3 under Ambient Conditions
• Reversal of the circular dichroism in the angle-resolved photoemission from Bi2Te3
• Observation of spin-momentum locked surface states in amorphous Bi${}_2$Se${}_3$
• Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers
• Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators
• Terahertz Photogalvanic Spectroscopy of Three Dimensional Topological Insulators
• Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy
• Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi${}_2$Te${}_3$ nanoribbons
• Photocurrent measurements in topological insulator ${\text{Bi}}_2{\text{Se}}_3$ nanowires