Helicity sensitive terahertz radiation detection by field effect transistors

Abstract

Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature and fast (better than 1 ns) characterisation of all polarization parameters (Stokes parameters) of terahertz radiation. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors.

7 pages, 4 figures

References in corpus (5)

• Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
• Cyclotron resonance photoconductivity of a two-dimensional electron gas in HgTe quantum wells
• Generation and detection of Terahertz radiation by Field Effect Transistors
• Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures
• Subnanosecond Ellipticity Detector for Laser Radiation (second version, extended)

Cited by in corpus (21)

• Ratchet effects in two-dimensional systems with a lateral periodic potential
• Infrared/Terahertz Spectra of the Photogalvanic Effect in (Bi,Sb)Te based Three Dimensional Topological Insulators
• High intensity study of THz detectors based on field effect transistors
• Terahertz Photogalvanic Spectroscopy of Three Dimensional Topological Insulators
• Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
• Symmetry breaking and circular photogalvanic effect in epitaxial Cd${}_x$Hg${}_{1-x}$Te films
• Helicity sensitive plasmonic teraherts interferometer
• Terahertz Plasmonic Detector Controlled by Phase Asymmetry
• Circular and linear magnetic quantum ratchet effects in dual-grating-gate CdTe-based nanostructures
• Polarization dependence of transverse photo-induced voltage in gold thin film with random nanoholes
• High frequency impact ionization and nonlinearity of photocurrent induced by intense terahertz radiation in HgTe-based quantum well structures
• Theory of helicity-sensitive terahertz radiation detection by field effect transistors
• Modeling of antenna-coupled Si MOSFETs in the Terahertz Frequency Range
• Time resolution and dynamic range of field effect transistor based terahertz detectors
• Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd${}_x$Hg${}_{1-x}$Te
• Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene
• Magnetic quantum ratchet effect in Si-MOSFETs
• Plasmonic Helicity-Driven Detector of terahertz radiation
• Circular THz ratchets in a 2D-modulated Dirac system
• Impact ionization induced by terahertz radiation in HgTe quantum wells of critical thickness
• Carbon nanotubes for polarization sensitive terahertz plasmonic interferometry