Subnanosecond Ellipticity Detector for Laser Radiation (second version, extended)

Abstract

Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have nanoseconds time constants at room temperature making a high time resolution of the polarization detectors possible.

References in corpus (2)

• Demonstration of Rashba spin splitting in GaN-based heterostructures
• Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

Cited by in corpus (7)

• Geometric Filterless Photodetectors for Mid-infrared Spin Light
• Helicity sensitive terahertz radiation detection by field effect transistors
• Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures
• Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
• All-electric detectors of the polarization state of terahertz laser radiation (extended version)
• Ratchet transport of a two-dimensional electron gas at cyclotron resonance
• Topological Insulator Metamaterial with Giant Circular Photogalvanic Effect