Highly superlinear photogalvanic effects in (Bi${}_{0.3}$Sb${}_{0.7}$)${}_2$(Te${}_{0.1}$Se${}_{0.9}$)${}_3$: Probing 3D topological insulator surface states at room temperature

Abstract

We report on the observation of complex nonlinear intensity dependence of the circular and linear photogalvanic currents induced by infrared radiation in compensated (Bi${}_{0.3}$Sb${}_{0.7}$)${}_2$(Te${}_{0.1}$Se${}_{0.9}$)${}_3$ 3D topological insulators. The photocurrents are induced by direct optical transitions between topological surface and bulk states. We show that an increase of the radiation intensity results first in a highly superlinear raise of the amplitude of both types of photocurrents, whereas at higher intensities the photocurrent saturates. Our analysis of the observed nonlinearities shows that the superlinear behavior of the photocurrents is caused by a heating of the electron gas, while the saturation is induced by a slow relaxation of the photoexcited carriers resulting in absorbance bleaching. The observed nonlinearities give access to the Fermi level position with respect to the Dirac point and the energy relaxation times of Dirac fermions providing an experimental room temperature probe for topological surface states.

arXiv comment12 pages, 7 figures

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• Nonlinear intensity dependence of photogalvanics and photoconductance induced by terahertz laser radiation in twisted bilayer graphene close to magic angle
• Nonlinear optical absorption and photocurrents in topological insulators
• Bulk-Fermi-Arc Transition Induced Large Photogalvanic Effect in Weyl Semimetals
• Barrier height inhomogeneity and origin of 1/f-noise in topological insulator-based photo-detector
• THz radiation induced circular Hall effect in graphene
• Terahertz spin ratchet effect in magnetic metamaterials
• Tracing Dirac points of topological surface states by ferromagnetic resonance
• Enhanced detection of circularly polarized photons with topological materials