Large-Gap Quantum Anomalous Hall Insulators in Ti Class
arXiv:2211.08938 · doi:10.1103/PhysRevB.108.165122
Abstract
We theoretically propose that the monolayer Ti family (KTiSb, KTiBi, RbTiSb, SrTiSn) are potential candidates for large-gap quantum anomalous Hall insulators with high Chern number . Both of the topology and magnetism in these materials are from -orbitals of Ti. We construct the tight-binding model with symmetry analysis to reveal the origin of topology. Remarkably, quite different from the conventional - band inversion, here the topological band inversion within orbitals is due to the crystal field and electron hopping, while spin-orbit coupling only trivially gaps out the Dirac cone at Fermi level. The general physics from the orbitals here applies to a large class of transition metal compounds with the space group or - and their subgroups.
6 pages, 4 figures
References in corpus (8)
- Quantized Anomalous Hall Effect in Magnetic Topological Insulators
- High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
- Quantum Anomalous Hall Effect in HgMnTe Quantum Wells
- Progress and prospects in magnetic topological materials
- Precise quantization of anomalous Hall effect near zero magnetic field
- Double crystallographic groups and their representations on the Bilbao Crystallographic Server
- Chern Number Tunable Quantum Anomalous Hall Effect in Monolayer Transitional Metal Oxides via Manipulating Magnetization Orientation
- Graph Theory Data for Topological Quantum Chemistry