In-Plane Magnetization Induced Quantum Anomalous Hall Effect in Atomic Crystals of Group-V Elements

Abstract

We theoretically demonstrate that the in-plane magnetization induced quantum anomalous Hall effect (QAHE) can be realized in atomic crystal layers of group-V elements with buckled honeycomb lattice. We first construct a general tight-binding Hamiltonian with $s{p}^3$ orbitals via Slater-Koster two-center approximation, and then numerically show that for weak and strong spin-orbit couplings the systems harbor QAHEs with Chern numbers of $\mathcal{C}=\pm 1$ and $\pm 2$ , respectively. For the $\mathcal{C}=\pm 1$ phases, we find the critical phase-transition magnetization from a trivial insulator to QAHE can become extremely small by tuning the spin-orbit coupling strength. Although the resulting band gap is small, it can be remarkably enhanced by orders via tilting the magnetization slightly away from the in-plane orientation. For the $\mathcal{C}=\pm 2$ phases, we find that the band gap is large enough for the room-temperature observation. Although the critical magnetization is relatively large, it can be effectively decreased by applying a strain. All these suggest that it is experimentally feasible to realize high-temperature QAHE from in-plane magnetization in atomic crystal layers of group-V elements.

arXiv comment6 pages, 3 figures

References in corpus (30)

• Berry Phase Effects on Electronic Properties
• Topological Insulators with Inversion Symmetry
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
• Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems
• Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
• Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
• Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
• Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit
• Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
• Topological Phases in Two-Dimensional Materials: A Brief Review
• Quantum anomalous Hall effect and related topological electronic states
• Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
• Atomically thin group-V elemental films: theoretical investigations of antimonene allotropes
• Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
• Valley-Polarized Quantum Anomalous-Hall Effects in Silicene
• Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study
• Spin-Valleytronics in Silicene: Quantum-Spin-Quantum-Anomalous Hall Insulators and Single-Valley Semimetals
• Electrically tunable quantum anomalous Hall effect in 5d transition-metal adatoms on graphene
• Magnetic and Electronic Properties of Metal-Atom Adsorbed Graphene
• In-plane Magnetization Induced Quantum Anomalous Hall Effect
• Bi(111) thin film with insulating interior but metallic surfaces
• Correlation-driven topological phase transition from in-plane magnetized quantum anomalous Hall to Mott insulating phase in monolayer transition metal trichlorides
• High-Temperature Quantum Anomalous Hall Effect in n-p Codoped Topological Insulators
• Quantum anomalous Hall effect in magnetic topological insulators
• Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement
• Quantum anomalous Hall effect in atomic crystal layers from in-plane magnetization
• Topological phases of Bi(111) bilayer in an external exchange field
• Topological fate of edge states of Bi single bilayer on Bi(111)
• Engineering quantum anomalous Hall phases with orbital and spin degrees of freedom

Cited by in corpus (14)

• Engineering Corner States from Two-Dimensional Topological Insulators
• Transport in two-dimensional topological materials: recent developments in experiment and theory
• In-plane anomalous Hall effect in PT-symmetric antiferromagnetic materials
• Ferromagnetism with in-plane magnetization, Dirac spin-gapless semiconducting property, and tunable topological states in two-dimensional rare-earth-metal dinitrides
• Symmetry-based requirement for the measurement of electrical and thermal Hall conductivity under an in-plane magnetic field
• Unconventional anomalous Hall effect from magnetization parallel to the electric field
• Chiral Majorana fermions in graphene from proximity-induced superconductivity
• Topological Corner States in Graphene by Bulk and Edge Engineering
• Topological transitions by magnetization rotation in kagome monolayers of ferromagnetic Weyl semimetal Co-based shandite
• Switchable in-plane anomalous Hall effect by magnetization orientation in monolayer ${\mathrm{Mn}}_3{\mathrm{Si}}_2{\mathrm{Te}}_6$
• Observation of the In-plane Anomalous Hall Effect induced by Octupole in Magnetization Space
• Impurity-potential-induced gap at the Dirac point of topological insulators with in-plane magnetization
• Valley- and Orbital-Controlled 2D Chern Insulators Without Spin-orbit Interaction
• Large-Gap Quantum Anomalous Hall Effect in Monolayer Halide Perovskite