Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study
arXiv:1104.0978 · doi:10.1103/PhysRevLett.107.136805
Abstract
Recently, there have been intense efforts in searching for new topological insulator (TI) materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z2 number independent of the film thickness, without the odd-even oscillation of topological triviality as commonly perceived. The stable nontrivial Z2 topology is retained by the concurrent band gap inversions at multiple time-reversal-invariant k-points and associated with the intermediate inter-bilayer coupling of the multi-bilayer Bi film. Our calculations further indicate that the presence of metallic surface states in thick Bi(111) films can be effectively removed by surface adsorption.
5 pages, 3 figures
References in corpus (8)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Topological Insulators with Inversion Symmetry
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- First direct observation of Spin-textures in Topological Insulators : Spin-resolved ARPES as a probe of topological quantum spin Hall effect and Berry's phase
- Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
- Well-localized edge states in two-dimensional topological insulators: ultrathin Bi films
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