Epitaxial Growth of Ultraflat Bismuthene with Large Topological Band Inversion Enabled by Substrate-Orbital-Filtering Effect
arXiv:2110.02461 · doi:10.1021/acsnano.1c09592
Abstract
Quantum spin Hall (QSH) systems hold promises of low-power-consuming spintronic devices, yet their practical applications are extremely impeded by the small energy gaps. Fabricating QSH materials with large gaps, especially under the guidance of design principles, is essential for both scientific research and practical applications. Here, we demonstrate that large on-site atomic spin-orbit coupling can be directly exploited via the intriguing substrate-orbital-filtering effect to generate large-gap QSH systems and experimentally realized on the epitaxially synthesized ultraflat bismuthene on Ag(111). Theoretical calculations reveal that the underlying substrate selectively filters Bi pz orbitals away from the Fermi level, leading pxy orbitals with nonzero magnetic quantum numbers, resulting in large topological gap of ~1 eV at the K point. The corresponding topological edge states are identified through scanning tunneling spectroscopy combined with density functional theory calculations. Our findings provide general strategies to design large-gap QSH systems and further explore their topology-related physics.
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Cited by in corpus (9)
- Microscopic study of orbital textures
- Structural spillage: an efficient method to identify non-crystalline topological materials
- Gentle tension stabilizes atomically thin metallenes
- Ultrafast Momentum-resolved Hot Electron Dynamics in the Two-dimensional Topological Insulator Bismuthene
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- RKKY interactions mediated by topological states in transition metal doped bismuthene
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- Structure determination of flat honeycomb Bi grown on Ag(111)
- Valley- and Orbital-Controlled 2D Chern Insulators Without Spin-orbit Interaction