Band structure of Bi surfaces formed on Bi2Se3 upon exposure to air
arXiv:2404.17203 · doi:10.1103/PhysRevMaterials.8.054201
Abstract
BiSe has been the focus of intense interest over the past decade due to its topological properties. Bi surfaces are known to form on BiSe upon exposure to atmosphere, but their electronic structure has not been investigated. We report band structure measurements of such Bi surfaces using angle-resolved photoemission spectroscopy. Measured spectra can be well explained by the band structure of a single bilayer of Bi on BiSe, and show that Bi surfaces consistently dominate the photoemission signal for air exposure times of at least 1 hour. These results demonstrate that atmospheric effects should be taken into consideration when identifying two-dimensional transport channels, and when designing surface-sensitive measurements of BiSe, ideally limiting air exposure to no more than a few minutes.
References in corpus (31)
- Topological Insulators in Three Dimensions
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- Topological origin of subgap conductance in insulating bilayer graphene
- Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
- Bulk Fermi surface coexistence with Dirac surface state in BiSe: a comparison of photoemission and Shubnikov-de Haas measurements
- Thickness-independent transport channels in topological insulator Bi2Se3 thin films
- Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
- Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study
- Angle Dependent Van Hove Singularities in Slightly Twisted Graphene Bilayer
- Quantum oscillations in Kondo Insulator SmB
- Reactive chemical doping of the topological insulator
- Optical characterization of BiSe in a magnetic field: infrared evidence for magnetoelectric coupling in a topological insulator material
- Persistence of Topological Order and Formation of Quantum Well States in Topological Insulators Bi2(Se,Te)3 under Ambient Conditions
- Direct Optical Coupling to an Unoccupied Dirac Surface State in the Topological Insulator BiSe
- Selective probing of photo-induced charge and spin dynamics in the bulk and surface of a topological insulator
- Nonlinear optical probe of tunable surface electrons on a topological insulator
- Ultrafast carrier and phonon dynamics in Bi2Se3 crystals
- Spatially resolved femtosecond pump-probe study of topological insulator Bi2Se3
- Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators
- Ultrafast Terahertz Conductivity Probes of Topologically Enhanced Surface Transport Driven by Mid-Infrared Laser Pulses in BiSe
- Ultrafast Electron Dynamics in the Topological Insulator Bi2Se3 Studied by Time-Resolved Photoemission Spectroscopy
- Experimental setup for low-energy laser-based angle resolved photoemission spectroscopy
- Direct Measurement of Surface Transport on a Bulk Topological Insulator
- Termination dependent topological surface states of the natural superlattice phase BiSe
- Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface X-ray diffraction
- Tuning time and energy resolution in time-resolved photoemission spectroscopy with nonlinear crystals
- Work function of bulk-insulating topological insulator Bi2-xSbxTe3-ySey
- Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on BiSe
- Expanding the momentum field of view in angle-resolved photoemission systems with hemispherical analyzers
- Stability of topological properties of bismuth (111) bilayer
- Low work function in the 122-family of iron-based superconductors