The edge engineering of topological Bi(111) bilayer
arXiv:1403.0147 · doi:10.1103/PhysRevB.90.165412
Abstract
A topological insulator is a novel quantum state, characterized by symmetry-protected non-trivial edge/surface states. Our first-principle simulations show the significant effects of the chemical decoration on edge states of topological Bi(111) bilayer nanoribbon, which remove the trivial edge state and recover the Dirac linear dispersion of topological edge state. By comparing the edge states with and without chemical decoration, the Bi(111) bilayer nanoribbon offers a simple system for assessing conductance fluctuation of edge states. The chemical decoration can also modify the penetration depth and the spin texture of edge states. A low-energy effective model is proposed to explain the distinctive spin texture of Bi(111) bilayer nanoribbon, which breaks the spin-momentum orthogonality along the armchair edge.
arXiv comment5 pages, 5 figures
References in corpus (23)
- Topological Insulators
- Topological insulators and superconductors
- Quantum Spin Hall Effect in Graphene
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
- Maximally-localized generalized Wannier functions for composite energy bands
- Topological Insulators with Inversion Symmetry
- Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Model Hamiltonian for Topological Insulators
- Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
- Topological Anderson Insulator
- Finite size effects of helical edge states in HgTe/CdTe quantum wells
- Well-localized edge states in two-dimensional topological insulators: ultrathin Bi films
- Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study
- Angle Dependent Van Hove Singularities in Slightly Twisted Graphene Bilayer
- Numerical study of the topological Anderson insulator in HgTe/CdTe quantum wells
- Experimentally Engineering the Edge Termination of Graphene Nanoribbons
- Topologically protected quantum transport in locally exfoliated bismuth at room temperature
- Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators
- Creation of Helical Dirac Fermions by Interfacing Two Gapped Systems of Ordinary Fermions
- Transport discovery of emerging robust helical surface states in systems
- DMPK Equation for the Edge Transport of Quantum Spin Hall Insulator
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- Visualizing topological edge states of single and double bilayer Bi supported on multibilayer Bi(111) films
- Disorder Effects in Topological States -- Brief Review of the Recent Developments
- Engineering electronic structure of a 2D topological insulator Bi(111) bilayer on Sb nanofilms by quantum confinement effect
- New Group V Elemental Bilayers: A Tunable Structure Model with 4,6,8-atom Rings
- Electric control of the edge magnetization in zigzag stanene nanoribbon
- Topological phases in Bi/Sb planar and buckled honeycomb monolayers
- Stability of topological properties of bismuth (111) bilayer
- Engineering Topological quantum dot through planar magnetization in bismuthene
- Interfacial-state coupling induced topological phase transitions in SnTe (110) thin film
- Localized Wannier function based tight-binding models for two-dimensional allotropes of bismuth
- Edge state preparation in one dimensional lattice by quantum Lyapunov control
- Competing edge structures of Sb and Bi bilayers by trivial and nontrivial band topologies
- Entanglement entropy and entanglement spectrum of BiSb (111) bilayers
- Intrinsic higher-order topological states in 2D honeycomb Z_2 quantum spin Hall insulators
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