Bi(111) thin film with insulating interior but metallic surfaces
arXiv:1201.1480 · doi:10.1103/PhysRevLett.109.166805
Abstract
The electrical conductance of molecular beam epitaxial Bi on BaF2(111) was measured as a function of both film thickness (4-540 nm) and temperature (5-300 K). Unlike bulk Bi as a prototype semimetal, the Bi thin films up to 90 nm are found to be insulating in the interiors but metallic on the surfaces. This result has not only resolved unambiguously the long controversy about the existence of semimetal-semiconductor transition in Bi thin film but also provided a straightforward interpretation for the long-puzzled temperature dependence of the resistivity of Bi thin films, which in turn might suggest some potential applications in spintronics.
References in corpus (4)
- Topological Insulators with Inversion Symmetry
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
- Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study
Cited by in corpus (22)
- Electronic phase transitions of bismuth under strain from relativistic self-consistent GW calculations
- Origin of inverse Rashba-Edelstein effect at Cu/Bi interface using lateral spin valves
- Time-Reversal-Symmetry-Breaking Superconductivity in Epitaxial Bismuth/Nickel Bilayers
- Evidence of topological two-dimensional metallic surface states in thin bismuth nanoribbons
- In-Plane Magnetization Induced Quantum Anomalous Hall Effect in Atomic Crystals of Group-V Elements
- Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3
- Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate
- Photo-induced electronic and spin topological phase transitions in monolayer bismuth
- Superconductivity in the Bi/Ni bilayer
- Spin-orbit torques and spin Hall magnetoresistance generated by twin-free and amorphous Bi0.9Sb0.1 topological insulator films
- Electronic properties of bismuth nanostructures
- Evidence of the side jump mechanism in the anomalous Hall effect in paramagnets
- Observation of gigantic spin conversion anisotropy in bismuth
- Band engineering of a magnetic thin film rare earth monopnictide
- Structural modification of thin Bi(1 1 1) films by passivation and native oxide model
- Ni/Bi bilayers: The effect of thickness on the superconducting properties
- Some aspects of epitaxial thin film growth
- Anomalous Hall Effect in Thin Bismuth
- Origin of the giant spin Hall effect in BiSb topological insulator
- Kinetics and the crystallographic structure of bismuth during liquefaction and solidification on the insulating substrate
- Unconventional interfacial superconductivity in epitaxial Bi/Ni heterostructures
- Charge-to-spin conversion in epitaxial and polycrystalline Bi and Bi/Ag layers