CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement

Abstract

In this study, a formal definition, robustness analysis and discussion on the control of a position-based semiconductor charge qubit are presented. Such a qubit can be realized in a chain of coupled quantum dots, forming a register of charge-coupled transistor-like devices, and is intended for CMOS implementation in scalable quantum computers. We discuss the construction and operation of this qubit, its Bloch sphere, and relation with maximally localized Wannier functions which define its position-based nature. We then demonstrate how to build a tight-binding model of single and multiple interacting qubits from first principles of the Schrödinger formalism. We provide all required formulae to calculate the maximally localized functions and the entries of the Hamiltonian matrix in the presence of interaction between qubits. We use three illustrative examples to demonstrate the electrostatic interaction of electrons and discuss how to build a model for many-electron (qubit) system. To conclude this study, we show that charge qubits can be entangled through electrostatic interaction.

arXiv commentPublished in: IEEE Access (Early Access) https://ieeexplore.ieee.org/document/8936906

References in corpus (30)

• Non-Abelian Anyons and Topological Quantum Computation
• Maximally-localized generalized Wannier functions for composite energy bands
• Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
• Measuring entanglement entropy through the interference of quantum many-body twins
• A Two Qubit Logic Gate in Silicon
• Superconducting Circuits and Quantum Information
• Demonstration of a small programmable quantum computer with atomic qubits
• Bell Inequalities and the Separability Criterion
• Quantum oscillations in two coupled charge qubits
• A CMOS silicon spin qubit
• Charge-qubit operation of an isolated double quantum dot
• Quantum Coherence in a One-Electron Semiconductor Charge Qubit
• Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array
• Observation of Entangled States of a Fully Controlled 20-Qubit System
• Charge-based quantum computing using single donors in semiconductors
• Local and Distributed Quantum Computation
• Electrical spin driving by $g$-matrix modulation in spin-orbit qubits
• Single-Spin CCD
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• A cryogenic amplifier for fast real-time detection of single-electron tunneling
• Single-shot single-gate RF spin readout in silicon
• Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots
• Achieving High-Fidelity Single-Qubit Gates in a Strongly Driven Charge Qubit with $1/f$ Charge Noise
• Qubit gates with simultaneous transport in double quantum dots
• Pulse sequences for suppressing leakage in single-qubit gate operations
• Charge qubit in van der Waals heterostructures
• Electrostatic quantum dots in silicene
• Measuring the Entanglement between Double Quantum Dot Charge Qubits
• Charge qubits and limitations of electrostatic quantum gates
• Suppression of leakage for a charge quadrupole qubit in triangular geometry

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• Thermometry of Strongly Correlated Fermionic Quantum Systems using Impurity Probes
• Paired electron motion in interacting chains of quantum dots
• CMOS Quantum Computing: Toward A Quantum Computer System-on-Chip
• Simulation Methodology for Electron Transfer in CMOS Quantum Dots
• Bridging Quantum and Classical Descriptions of Spin Dynamics in a Dzyaloshinsky-Moriya Trimer