Simulation Methodology for Electron Transfer in CMOS Quantum Dots
arXiv:2006.14103 · doi:10.1007/978-3-030-50433-5_50
Abstract
The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor qubits based on an advanced CMOS technology. Starting from 3D simulations, we demonstrate an order reduction and the steps necessary to obtain ordinary differential equations on probability amplitudes in a multi-particle system. We compare numerical and semi-analytical techniques concluding this paper by examining two case studies: the electron transfer through multiple quantum dots and the construction of a Hadamard gate simulated using a numerical method to solve the time-dependent Schrodinger equation and the tight-binding formalism for a time-dependent Hamiltonian.
References in corpus (13)
- A Two Qubit Logic Gate in Silicon
- Quantum Coherence in a One-Electron Semiconductor Charge Qubit
- Decoherence in qubits due to low-frequency noise
- Universal Quantum Hamiltonians
- Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots
- Achieving High-Fidelity Single-Qubit Gates in a Strongly Driven Charge Qubit with Charge Noise
- Two-channel Kondo phases and frustration-induced transitions in triple quantum dots
- The Harmonic Oscillator in Quantum Mechanics: A Third Way
- Qubit gates with simultaneous transport in double quantum dots
- From real materials to model Hamiltonians with density matrix downfolding
- CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement
- Paired electron motion in interacting chains of quantum dots
- Charge qubits and limitations of electrostatic quantum gates