Strained graphene Hall bar

Abstract

The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport theory and we found that both approaches exhibit similar characteristic features. The effects of the Gaussian bump are manifested by a decrease of the bend resistance, $R_B$, around zero-magnetic field and the occurrence of side-peaks in $R_B$. These features are explained as a consequence of bump-assisted scattering of electrons towards different terminals of the Hall bar. Using these features we are able to give an estimate of the size of the bump. Additional oscillations in $R_B$ are found in the quantum description that are due to the population/depopulation of Landau levels. The bump has a minor influence on the Hall resistance even for very high values of the pseudo-magnetic field. When the bump is placed outside the center of the Hall bar valley polarized electrons can be collected in the leads.

to appear in J. Phys.: Condens. Matter

References in corpus (25)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Kwant: a software package for quantum transport
• All-graphene integrated circuits via strain engineering
• Gauge fields in graphene
• Raman spectroscopy of graphene and bilayer under biaxial strain: bubbles and balloons
• Midgap states and charge inhomogeneities in corrugated graphene
• Generating quantizing pseudomagnetic fields by bending graphene ribbons
• Strain-induced pseudo-magnetic field for novel graphene electronics
• Gauge fields from strain in graphene
• Gaps tunable by electrostatic gates in strained graphene
• Programmable Extreme Pseudomagnetic Fields in Graphene by a Uniaxial Stretch
• Aharonov-Bohm interferences from local deformations in graphene
• Pseudo magnetic field in strained graphene: revisited
• Bistability and oscillatory motion of natural nano-membranes appearing within monolayer graphene on silicon dioxide
• Strain Induced One-Dimensional Landau-Level Quantization in Corrugated Graphene
• Conductance oscillations induced by ballistic snake states in a graphene heterojunction
• Strained fold assisted transport in graphene systems
• Pseudomagnetic fields and triaxial strain in graphene
• Gaussian deformations in graphene ribbons: flowers and confinement
• Electronic states in a graphene flake strained by a Gaussian bump
• Localization and circulating currents in curved graphene devices
• Snake states and Klein tunneling in a graphene Hall bar with a pn-junction
• Spectroscopy of snake states using a graphene Hall bar

Cited by in corpus (13)

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• Band flattening in buckled monolayer graphene
• Quantum Hall response to time-dependent strain gradients in graphene
• Valley polarization braiding in strained graphene
• Valley notch filter in a graphene strain superlattice: Green's function and machine learning approach
• Enhanced asymmetric valley scattering by scalar fields in non-uniform out-of-plane deformations in graphene
• Electron transport properties of graphene nanoribbons with Gaussian deformation
• Numerical quasi-conformal transformations for electron dynamics on strained graphene surfaces
• A strain-engineered graphene qubit in a nanobubble
• Sublattice symmetry breaking and Kondo-effect enhancement in strained graphene
• Transport through dynamic pseudo-gauge fields and snake states in a Corbino geometry
• Detecting Strain Effects due to Nanobubbles in Graphene Mach-Zehnder Interferometers
• Transport in strained graphene: Interplay of Abelian and axial magnetic fields