Quantum Hall States in Graphene from Strain-Induced Nonuniform Magnetic Fields

Abstract

We examine strain-induced quantized Landau levels in graphene. Specifically, arc-bend strains are found to cause nonuniform pseudomagnetic fields. Using an effective Dirac model which describes the low-energy physics around the nodal points, we show that several of the key qualitative properties of graphene in a strain-induced pseudomagnetic field are different compared to the case of an externally applied physical magnetic field. We discuss how using different strain strengths allows us to spatially separate the two components of the pseudospinor on the different sublattices of graphene. These results are checked against a tight-binding calculation on the graphene honeycomb lattice, which is found to exhibit all the features described. Furthermore, we find that introducing a Hubbard repulsion on the mean-field level induces a measurable polarization difference between the A and the B sublattices, which provides an independent experimental test of the theory presented here.

9 pages, 8 figures. Updated to version that appears in PRB

References in corpus (9)

• The electronic properties of graphene
• All-graphene integrated circuits via strain engineering
• Self-passivating edge reconstructions of graphene
• Edge States and the Quantized Hall Effect in Graphene
• Strained graphene: tight-binding and density functional calculations
• Peculiar Nature of Snake States in Graphene
• Hidden multiferroic order in graphene zigzag ribbons
• Snake States in Graphene p-n Junctions
• Charge and Spin Transport at the Quantum Hall Edge of Graphene