Valley-resolved Fano resonance in monolayer transition metal dichalcogenides nanoribbons with attached stubs
arXiv:2111.03795 · doi:10.1103/PhysRevB.105.115305
Abstract
Valley degree of freedom besides spin is a promising candidate as a carrier of information. Spintronics has come a long way and spin modulation can be realized by quantum interference and spin-orbit coupling effect. However, the control of valley degree of freedom using quantum interference is still a problem to be explored. Here we discover a mechanism of producing valley polarization in a monolayer transition metal dichalcogenides nanoribbon with attached stubs, in which valley-resolved Fano resonance are formed due to the quantum interference of intervalley backscattering. When the quantum interference occurs between the localized states at the edge of the stubs and the continuous channels in the nanoribbon, the transmission dips of Fano effect is valley-polarized. As the number of stubs increases, the valley-polarized transmission dips will split and valley-resolved minigaps are formed by Fano resonance with intervalley backscattering in stub superlattice. When the electron incident energy is in these valley-resolved gaps of the superlattice, even with several stubs, the transmission can have a significant valley polarization. Our finding points to an opportunity to realize valley functionalities by quantum interference.
8 pages, 6 figures
References in corpus (11)
- The Valley Hall Effect in MoS2 Transistors
- Valley filter and valley valve in graphene
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Graphene valley filter using a line defect
- Aharonov-Bohm effect and broken valley-degeneracy in graphene rings
- Tuning the pseudospin polarization of graphene by a pseudo-magnetic field
- Fano-Rashba effect in a quantum wire
- Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals
- Spin-Valley Locking Effect in Defect States of Monolayer MoS
- Transmission phase read-out of a large quantum dot in a nanowire interferometer
- Valley Pumping via Edge States and the Nonlocal Valley Hall Effect in Two-Dimensional Semiconductors