Modulation of Landau levels and de Haas-van Alphen oscillation in magnetized graphene by uniaxial tensile strain/ stress
arXiv:2009.14423 · doi:10.1016/j.jmmm.2020.167473
Abstract
The strain engineering technique allows us to alter the electronic properties of graphene in various ways. Within the continuum approximation, the influences of strain result in the appearance of a pseudo-gauge field and modulated Fermi velocity. In this study, we investigate theoretically the effect of linear uniaxial tensile strain and/or stress, which makes the Fermi velocity anisotropic, on a magnetized graphene sheet in the presence of an applied electrostatic voltage. More specifically, we analyze the consequences of the anisotropic nature of the Fermi velocity on the structure Landau levels and de Haas - van Alphen (dHvA) quantum oscillation in the magnetized graphene sheet. The effect of the direction of the applied strain has also been discussed.
arXiv comment20 pages
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- On the oscillating properties of a two-electron quantum dot in the presence of a magnetic field
- Quantum-Hall Spectroscopy of Elliptically Deformed Graphene Nanobubble Qubits