Raman scattering of graphene based systems in high magnetic fields

Abstract

We review the different results obtained in the last decade in the field of Raman scattering of graphene based systems, with an applied magnetic field. Electronic properties of graphene based systems with an applied magnetic field will first be described. The phonon response in magnetic field, the magneto-phono resonance, will then be introduced and described in different systems, including graphene, multilayer graphene and bulk graphite. Electronic Raman scattering is then be discussed in the context of Landau level spectroscopy, of electron phonon interaction and of electron-electron interaction.

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Cited by in corpus (6)

• Impact of Many-Body Effects on Landau Levels in Graphene
• Electrical Control over Phonon Polarization in Strained Graphene
• Superconductivity-induced features in electronic Raman spectrum of monolayer graphene
• Time-resolved magneto-Raman study of carrier dynamics in low Landau levels of graphene
• Many-body filling-factor dependent renormalization of Fermi velocity in graphene in strong magnetic field
• Many-body renormalization of Landau levels in graphene due to screened Coulomb interaction