Gate dependent electronic Raman scattering in graphene

Abstract

We report the direct observation of polarization resolved electronic Raman scattering in a gated monolayer graphene device. The evolution of the electronic Raman scattering spectra with gate voltage and its polarization dependence are in full agreement with theoretical expectations for non-resonant Raman processes involving interband electron-hole excitations across the Dirac cone. We further show that the spectral dependence of the electronic Raman scattering signal can be simply described by the dynamical polarizability of graphene in the long wavelength limit. The possibility to directly observe Dirac fermion excitations in graphene opens the way to promising Raman investigations of electronic properties of graphene and other 2D crystals.

arXiv comment5 pages, 3 figures + Supplementary informations

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• Spectroscopic Signatures of Electronic Excitations in Raman Scattering in Thin Films of Rhombohedral Graphite
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• Raman Scattering as a Selective Probe of Chiral Electronic Excitations in Bilayer Graphene
• Superconductivity-induced features in electronic Raman spectrum of monolayer graphene
• Spin-orbit interaction enabled electronic Raman scattering from charge collective modes
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• Chiral Electronic Excitations in a Quasi-2D Rashba System BiTeI
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• Chiral electronic excitations and strong electron-phonon coupling to Weyl fermions in the Kagome semimetal Co${}_3$Sn${}_2$S${}_2$
• Many-body effects in suspended graphene probed through magneto-phonon resonances
• Electronic Raman scattering from 2D metals with broken inversion symmetry