Electronic Raman Scattering in Twistronic Few-Layer Graphene
arXiv:2005.10721 · doi:10.1103/PhysRevLett.125.197401
Abstract
We study electronic contribution to the Raman scattering signals of two-, three- and four-layer graphene with layers at one of the interfaces twisted by a small angle with respect to each other. We find that the Raman spectra of these systems feature two peaks produced by van Hove singularities in moiré minibands of twistronic graphene, one related to direct hybridization of Dirac states, and the other resulting from band folding caused by moiré superlattice. The positions of both peaks strongly depend on the twist angle, so that their detection can be used for non-invasive characterization of the twist, even in hBN-encapsulated structures.
arXiv comment7 pages (including 4 figures) + 10 pages (3 figures) supplement
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- TSTG I: Single-Particle and Many-Body Hamiltonians and Hidden Non-local Symmetries of Trilayer Moiré Systems with and without Displacement Field
- Wrinkling and crumpling in twisted few and multilayer CVD graphene: High density of edge modes influencing Raman spectra
- Moiré superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene
- Full Slonczewski-Weiss-McClure parametrization of few-layer twistronic graphene
- Spectroscopic signatures of tetralayer graphene polytypes
- Flat-band optical phonons in twisted bilayer graphene
- Optically-induced Umklapp shift currents in striped cuprates
- Semimetallic and semiconducting graphene-hBN multilayers with parallel or reverse stacking