Time-resolved magneto-Raman study of carrier dynamics in low Landau levels of graphene
arXiv:1810.08024 · doi:10.1103/PhysRevB.100.075401
Abstract
We study the relaxation dynamics of the electron system in graphene flakes under Landau quantization regime using a novel approach of time-resolved Raman scattering. The non-resonant character of the experiment allows us to analyze the field dependence of the relaxation rate. Our results clearly evidence sharp increase in the relaxation rate upon the resonance between the energy of the Landau transition and the G-band and shed new light on relaxation mechanism of the Landau-quantized electrons in graphene beyond the previously studied Auger scattering.
References in corpus (12)
- Electric Field Effect in Atomically Thin Carbon Films
- Landau level spectroscopy of ultrathin graphite layers
- Phonon anharmonicities in graphite and graphene
- How perfect can graphene be?
- Slowing hot carrier relaxation in graphene using a magnetic field
- Filling-Factor-Dependent Magnetophonon Resonance in Graphene
- Magneto-Raman scattering of graphene on graphite: Electronic and phonon excitations
- Signature of electronic excitations in the Raman spectrum of graphene
- Novel Electron-Phonon Relaxation Pathway in Graphite Revealed by Time-Resolved Raman Scattering and Angle-Resolved Photoemission Spectroscopy
- Polarization resolved magneto-Raman scattering of graphene-like domains on natural graphite
- Circular dichroism of magneto-phonon resonance in doped graphene
- Raman scattering of graphene based systems in high magnetic fields